| PART |
Description |
Maker |
| VSMY7852X01-GS08 |
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Techno
|
Vishay Siliconix
|
| MCD407 |
P-Channel 60-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| MCD413A |
P-Channel 40-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| MC3406 |
N-Channel 30-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| AO4468 |
N-Channel 30-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| AO6415 MC6415 |
P-Channel 20-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| MC4406 |
N-Channel 30-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| MC8803 AO8803 |
P-Channel 20-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| KSM5800 |
High performance trench technology for extermly low Rdson
|
Kersemi Electronic Co.,...
|
| MC7400 AO7400 |
N-Channel 20V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| AO4800 |
Dual N-Channel 30-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
